30. Jung-Ho Park, Do-Hwyn Kim, Seung Woo Son, Seung-Heon Shin, Jung-Hee Lee, Tae-Woo Kim and Dae-Hyun Kim, “A New unified mobility extraction technique of In0.7Ga0.3As QW MOSFETs”, IEEE Electron Device Letters, no. 9, pp. ,2016. (Corresponding Author)
29. Seung Woo Son, Jung Ho Park, Ji-Min Baek, Jin Su Kim, Do-Kywn Kim, Seung Heon Shin, S.K Banerjee, Jung Hee Lee, Tae-Woo Kim and Dae-Hyun Kim, “Performance and Carrier Transport Analysis of In0.7Ga0.3As Quantum-Well MOSFETs with Al2O3/HfO2 Gate Stack”, Solid State Electronics, Vol. 123, pp. 63- 67, 2016. (Corresponding Author)
28. Hyuk-Min Kwon, Do-Kywn Kim, Sung-Kyu Lim, Hae-Chual Hwang, Seung Woo Son, Jung Ho Park, Won-Sang Park, Jin Su Kim, Chan-Soo Shin, Won-Kyu Park, Jung Hee Lee, Dae-Hyun Kim and Tae-Woo Kim, “Instability investigation of In0.53Ga0.47As quantum-well MOSFETs with Al2O3 and Al2O3/HfO2”, Solid State Electronics, Vol. 121, pp.16-19, 2016. (Corresponding Author)
28. Tae-Woo Kim, Jin Su Kim, Do-Kywn Kim, Seung Heon Shin, Won-Sang Park, S. Banerjee and Dae-Hyun Kim, “High-Frequency characteristics of Lg = 60 nm InGaAs Metal-Oxide-Semiconductor High-Electron-Mobility-Transistor (MOSHEMT) with Al2O3 gate insulator,” IEE Electronics Letters, Vol. 52, 10, pp. 870- 872, 2016.
28. Rock-Hyun Baek, Jin Su Kim, Do-Kywn Kim, Tae-Woo Kim, and Dae-Hyun Kim, “High-Performance Logic Transistor DC Benchmarking Toward 7 nm Technology- Node Between III-V and Si Tri-gate n-MOSFETs using Virtual Source Injection Velocity Model,” Solid-State Electronics, Vol. 116, pp. 100-103, 2016. (Corresponding Author)
25. Donghyi Koh, Seung Heon Shin, Jaehyun Ahn, Sushant Sonde, Hyuk-Min Kwon, Tommaso Orzali, Dae-Hyun Kim, Sanjay K. Banerjee and Tae-Woo Kim, “Damage free Ar ion plasma surface treatment on In0.54Ga0.47As-on-silicon metal oxidesemiconductor device,” Applied Physics Letters, 107, 183509, Nov. 2015. (Corresponding Author)
24. Tae-Woo Kim, Hyuk-Min Kwon, Seung Heon Shin, Chan-Soo Shin, Won-Kyu Park, Eddie Chiu, Manny Rivera, Jae Ik Lew, Dmitry Veksler, Tommaso Orzali, and Dae-Hyun Kim, “Impact of H2 High-Pressure Annealing Onto InGaAs Quantum- Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate- Stack,” IEEE Electron Device Letters, Vol. 36, No. 7, p.672-674, Jul. 2015
23. Tommaso Orzali, Alexey Vert, Tae-Woo Kim, P.Y. Hung, Joshua L. Herman, Saikumar Vivekanand, Gensheng Huang, Max Kelman, Zia Karim, Richard J.W. Hill, Satyavolu S. Papa Rao, “Growth and characterization of an In0.53Ga0.47As-based Metal-Oxide-Semiconductor Capacitor (MOSCAP) structure on 300 mm on-axis Si (001) wafers by MOCVD“, Journal of Crystal Growth, Vol. 427, No. 1, p.72-79, Oct,2015.
22. Tae-Woo Kim and Dae-Hyun Kim, “Scaling and carrier transport behavior of buried-channel In0.7Ga0.3As MOSFETs with Al2O3 insulator”, Solid-State Electronics, 111, p. 218-222, 2015.
21. T.-W. Kim, DH. Koh, C.-S Shin, W.-K. Park, T. Orzali, C. Hobbs, P. Satyavolu, W. Maszara and D.-H. Kim, “Lg = 80 nm Tri-Gate Quantum-Well In0.53Ga0.47As Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) with Al2O3/HfO2 Gate Stack,” IEEE Electron Device Letters, 2014.
20. Hyuk-Min Kwon, Sung-Kyu Kwon, Kwang-Seok Jeong, Sung-Kwen Oh, Sun-Ho Oh, Won-Il Choi, Tae-Woo Kim, Dae-Hyun Kim, Chang-Yong Kang, Byoung-Hun Lee, Paul Kirsch and Hi-Deok Lee, “ A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metel-Insulator-Metal Capacitor, IEEE, Trans. On Electron Device, 2014.
19. T.-W. Kim, DH. Koh, H.M. Kwon, R.J.W. Hill, P.D. Kirsch, C.-S. Shin, W.-K. Park, SH. Shin, YD. Cho, DH. Ko, W. Maszara and D.-H. Kim, “In0.7Ga0.3As Quantum Well (QW) MOSFETs with Al2O3/HfO2 toward subthreshold swing ~ 60 mV/dec.”, Applied Physics Express (APEX), 2014.
18. D. Koh, H.M. Kwon, T.-W. Kim, D.-H. Kim, T. Hudnall, C.W. Bielawski, W. Maszara, V. Dmitry, D. Gilmer, P.D. Kirsch, and S.K. Banerjee, “Lg = 100 nm In0.7Ga0.3As Quantum Well MOSFETs with Atomic Layer Deposited Beryllium Oxide as interfacial layer”, Applied Physics Letters (APL), 2014. (Corresponding Author)
17. S. Deora, G. Bersuker, W. -Y. Loh, D. Veksler, K. Matthews, T. W. Kim, R. T. P. Lee, R. J. W. Hill, D. -H. Kim, W.-E Wang, C. Hobbs and P. D. Kirsch, “Positive bias instability and recovery in InGaAs channel n-MOSFETs”, IEEE Transactions on Device and Materials Reliability (TDMR), 2013.
16. Dae-Hyun Kim, Tae-Woo Kim, Richard J. W. Hill, Chadwin D. Young, Chang Yong Kang, Chris Hobbs, Paul Kirsch, Jesus A. del Alamo and Raj Jammy, “Highspeed E-mode InAs QW-MOSFETs with Al2O3 insulator for future RF applications,” IEEE Electron Device Letters (EDL), Vol. 34, No. 2, 2013.
15. D.-H. Kim, J. A. del Alamo, D. A. Antoniadis, J. Li, J.-M. Kuo, P. Pinsukanjana, Y.-C. Kao, P. Chen, A. Papavasiliou, C. King, E. Regan, M. Urteaga, B. Brar, and T.- W. Kim “Lg = 60 nm Recessed In0.7Ga0.3As MOSFETs with Al2O3 insulator,” Applied Physics Letters (APL), Vol. 101, No. 22, pp. 223507, 2012. (Corresponding Author)
14. D.-H. Kim, T.-W. Kim, M. Urteaga and B. Brar, “Lg = 150 nm Recessed Quantum- Well In0.7Ga0.3As MOS-HEMTs with Al2O3/In0.52Al0.48As composite insulator,” Electronics Letters, Vol. 48, No. 22, 2012 (Featured article).
13. D.-H. Kim, P. Chen, T.-W. Kim, M. Urteaga and B. Brar, “Lg = 100 nm InAs PHEMTs on InP Substrate with record high frequency response,” Electronics Letters, Vol. 48, No. 21, 2012 (Selected as a highlighted paper).
12. Jianquang Lin, Tae-Woo Kim, Dimitri Antoniadis, Jesus A. del Alamo, “A Self- Aligned InGaAs Quantum-Well Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated through a Lift-off Free Front-end Process,” Applied Physics Express, Vol. 5, pp. 064002, 2012.
11. Tae-Woo Kim, Dae-Hyun Kim, and Jesús A. del Alamo, “InGaAs HEMT with InAs-rich InAlAs barrier spacer for reduced source resistance,” Electronics Letters, Vol. 47, No. 6, pp. 406-407, March 2011. (Invitation to be featured paper)
10. Seung Heon Shin, Tae-Woo Kim, Jong-In Song, and Jae-Hyung Jang, “Buried-Pt Gate InP/In0.52Al0.48As/In0.7Ga0.3As Pseudomorphic HEMTs,” Solid-Sate Electronics, Vol. 62, No. 1, August 2011.
9. Seung Heon Shin, Jong-In Song, Jae-Hyung Jang, Sang-Duk Park, Jeong-Woon Bae, Geun-Young Yeom, and Tae-Woo Kim, “Electrical characteristics of buried-Pt Schottky contacts on thin InP/InAlAs heterostructure,” Journal of Vacuum Science Technology B, Vol. 29, No. 4, July/August 2011.
8. Tae-Woo Kim, Dae-Hyun Kim, Sang Duk Park, Seung Heon Shin, Seong June Jo, Ho-Jin Song, Young Min park, Jeoun-Oun Bae, Young-Woon Kim, Geun Young Yeom, Jae-Hyung Jang, and Jong-In Song, “A two-step recess process based on atomic-layer-etching for high-performance In0.52Al0.48As/In0.53Ga0.47As p-HEMTs,” IEEE Tran. On Electron Device, Vol. 55, No. 7, pp. 1577-1584, 2008.
7. Tae-Woo Kim, Dae-Hyun Kim, Sang Duk Park, Geun Young Yeom, Byeong Ok Lim, Jin-Koo Rhee, Jae-Hyung Jang, and Jong-In Song, “Effect of two-step recess process using atomic layer etching on performance of In0.52Al0.48As/In0.53Ga0.47As p- HEMTs,” IEEE Electron Device Lett., Vol. 28, No. 12, pp. 1086-1088, 2007.
6. T.-W. Kim, D.-H. Kim, S. D. Park, J.W. Bae, G.Y. Yoem, J.I. Song, J.H. Jang, “Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching”, Appl. Phy. Lett., Vol. 91, No. 11, pp. 102110, 2007.
5. S. D. Park, C. K. Oh, W. S. Lim, H. C. Lee, J. W. Bae, and G. Y. Yeom, T. W. Kim, J. I. Song, J. H. Jang, “Highly selective and low damage atomic layer etching of InP/InAlAs heterostructures for HEMT fabrication”, Appl. Phy. Lett., Vol. 91, pp. 013110, 2007.
4. S. D. Park, C. K. Oh, J. W. Bae, and G. Y. Yeom, T. W. Kim, J. I. Song, J. H. Jang, “Atomic layer etching of InP using a low angle forward reflected Ne neutral beam”, Appl. Phy. Lett., Vol. 89, pp. 043109, 2006.
3. Ho-Jin Song, Tae-Woo Kim, Seong June Jo, Chung-Hyun Lim, Kyoung-Hwan Oh, Soo-Ghang Ihn and Jong-In Song, “Microwave Photonic Mixer Utilizing an InGaAs Photoconductor for Radio over Fiber Applications”, IEICE Trans. Electron., Vol. E90-C, No. 2, pp. 457-464, 2007.
2. Tae-Woo Kim, Dae-Hyun Kim, Seung Heon Shin, Seong June Jo, Jae-Hyung Jang and Jong-In Song, “Characteristics of 0.2 m Depletion and Quasi-enhancement bMode Self-aligned Gate Capless p-HEMTs”, IEE Electronic Lett., Vol. 42, No. 20, pp. 1178-1179, 2006.
1. Tae-Woo Kim, Seong June Jo and Jong-In Song, “Capless InP/In0.52Al0.48As/In0.53Ga0.47As p-HEMTs Having a Self-aligned Gate Structure,” IEEE Electron Device Letts., Vol. 27, No. 9, pp. 722-724, 1996.