49. Ju-Won Shin, Ki-Yong Shin, Walid Amir, Surajit Chakraborty, and Tae-Woo Kim, "Investigation of characteristics due to plasma treatment effects of AlGaN/GaN HEMT on SiC Substrates" , NANO KOREA 2022, Korea, 2022

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48. Ki-Yong Shin, Ju-Won Shin, Walid Amir, Surajit Chakraborty, and Tae-Woo Kim, "Reliability analysis based on trap behavior of InAlAs/InGaAs metamorphic HEMTs with pulsed IV and 1/f noise measurement" , NANO KOREA 2022, Korea, 2022

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47. Walid Amir, Ki-Yong Shin, Ju-Won Shin, Surajit Chakraborty, and Tae-Woo Kim, "Interfacial trap analysis for optimization of AI composition in AlGaN/GaN high electron mobility transistors" , NANO KOREA 2022, Korea, 2022

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46. Surajit Chakraborty, Ki-Yong Shin, Ju-Won Shin, Walid Amir, and Tae-Woo Kim, "Gate current degradation and critical voltage dependencies increasing Lsd of AlGaN/GaN high electron mobility transistor" , NANO KOREA 2022, Korea, 2022

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45. Ju-Won Shin  , Ki-Yong Shin  , Walid Amir  , Takuya Hoshi  , Takuya Tsutsumi  , Hiroki Sugiyama  , Hideaki matsuzaki  , and Tae-Woo Kim , "Effect of Plasma Treatment to AlGaN/GaN HEMTs on SiC substrate",  KCS(Korean Conference on Semiconductors) , Korea , 2022

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44. Walid Amir  , Ju-Won Shin  , Ki-Yong Shin  , Jae-Moo Kim , Chu-Young Cho  , Kyung-Ho Park  , Takuya Hoshi  , Takuya Tsutsumi  , Hiroki Sugiyama  , Hideaki Matsuzaki  , and Tae-Woo Kim , "Trap Analysis of AlGaN/GaN HEMT with Different Al Composition",  KCS(Korean Conference on Semiconductors) , Korea , 2022

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43. Ki-Yong Shin , Ju-Won Shin , WalidAmir  , Jae-Phil Shim , Sang-Tae Lee  , Hyun-Chul Jang  , Kyung-Ho Park  , Chan-Soo Shin  , and Tae-Woo Kim, "Trap Behavior of Metamorphic HEMTs with Pulsed IV and 1/f Noise Measurements" , KCS(Korean Conference on Semiconductors) , Korea , 2022

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42. Ju-Won Shin, Ki-Yong Shin, Amir Walid, Atish Bhattacharjee, Surajit Chakraborty, Tae-Woo Kim, "Trap analysis of AlGaN/GaN-based High Electron Mobility Transistors on different substrates" , ICAE(International Conference on Advanced Electromaterials) , Jeju island, 2021

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41. Ki-Yong Shin, Ju-Won Shin, Amir Walid, Atish Bhattacharjee, Surajit Chakraborty, Tae-Woo Kim, " Trap Analysis in In0.53Ga0.47As High-Electron Mobility Transistors" , ICAE(International Conference on Advanced Electromaterials) , Jeju island, 2021

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40. Atish Bhattacharjee, Amir Walid, Surajit Chakraborty, Ju-Won Shin, Ki-Yong Shin, Tae-Woo Kim. "Effect of Post Deposition Annealing on the Electrical Traps and Reliability of ALD deposited Al2O3 film." , ICAE(International Conference on Advanced Electromaterials) , Jeju island, 2021

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39. Surajit Chakraborty, Atish Bhattacharjee, Amir Walid, Ju-Won Shin, Ki-Yong Shin and Tae-Woo Kim , “Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility-Transistors.” , ICAE(International Conference on Advanced Electromaterials) , Jeju island, 2021

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38. Walid Amir, Atish Bhattacharjee, Surajit Chakraborty, Ju-Won Shin, Ki-Yong Shin and Tae-Woo Kim “Investigation of Quantum Mechanical Effects on Trap Extraction of Al2O3/In0.53Ga0.47As on a 300˗mm Si Substrate" , ICAE(International Conference on Advanced Electromaterials) , Jeju island, 2021

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37. J. S. Kim, S.H. Shin, D.-K. Kim, Y.D. Cho, C.-S. Shin, W.-K. Park, M. Rivera, J.I. Lew, J.-H. Lee, S. K. Banergee, T.-W. Kim and D.-H. Kim, “Improvement of interfacial-state density (Dit) in high-k/In0.53Ga0.47As MOSCAPs by D2 High- Pressure Annealing (HPA), The 23rd Korean Conference on Semiconductor (KCS), Jeongseon, 2016.
 

36. J.S. Kim, S.-H. Shin, D.K. Kim, Y.D. Cho, C.-S. Shin, W.-K. Park, E. Chiu, M. Rivera, J. I. Lew, J.-H. Lee, S. K. Banerjee, T.-W. Kim and D.-H. Kim, “Effect of D2 High-Pressure Annealing onto InGaAs MOSCAPs with Al2O3/HfO2 Gate stack”, 43rd Conference on the Physics & Chemistry of Surface and Interface (PCSI), Palm Springs, 2015.
 

35. J. S. Kim, T.-W. Kim, D.-K. Kim, S. H. Shin, W.-K. Park, S. Banerjee and D.-H. Kim, “Electrical properties of buried-channel In0.7Ga0.3As MOS-HEMT with Lg = 60 nm”, Energy Materials nanotechnology (ENM) Meeting, 2015.
 

34. D.-H. Kim, T.-W. Kim, C.-S. Shin, W.-K. Park, SH. Shin, YD. Cho, DH. Ko, J. A. del Alamo, B. Brar, K.-S. Seo, “High Performance InGaAs Field-Effect-Transistors for logic applications,” IEEE International Electron Device Meeting (IEDM), 2014. (Invited Paper).
 

33. C.-S. Shin, W.-K. Park, SH. Shin, YD. Cho, DH. Ko, T.-W. Kim, D.H. Koh, HM. Kwon, R. J. W. Hill, P. Kirsch, W. Maszara, and D.-H. Kim, “Sub-100 nm Regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with n,eff > 5,500 cm2/V-s”, Symposium on VLSI Technology, Honolulu (HI), June, 2014.
 

32. R.-H. Baek, T.-W. Kim, CS. Shin, WK. Park, T. Michalak, C. Borst, S. C. Song, Geoffrey Yeap, R. Hill, C. Hobbs, W. Maszara, D.-H. Kim, and P. Kirsch, “Electrostatics and Performance Benchmarking using all types of III-V Multi-gate FinFETs for sub 7nm Technology Node Logic Application”, Symposium on VLSI Technology, Honolulu (HI), June, 2014.
 

31. Young Dae Cho, In-Geun Lee, Seung Heon Shin, In-Hye Choi, Chan-Soo Shin, Kyung-Ho Park, Won-Kyu Park, Tae-Woo Kim, Dae-Hyun Kim, and Dae-Hong Ko, “Re-growth behavior of heavily-doped n+InGaAs Layer for gate-last III-V n- MOSFET fabrication using Metal Organic Chemical Vapor Deposition”, IEEE Nano- Korea, Seoul, 2014.
 

30. S. Deora, G. Bersuker, T.-W. Kim, D.-H. Kim, K. C. Sahoo, A. S. Oates, C. Hobbs and P. D. Kirsch, “Positive bias instability in gate-first and gate-last InGaAs channel n-MOSFETs”, 2014 IEEE International Reliability Physics Symposium.
 

29. Tae-Woo Kim, Dae-Hyun Kim, D.H. Koh, H.M. Kwon, R.H. Baek, D. Veksler, C. Huffman, K. Matthews, S. Oktyabrsky, A. Greene, Y. Ohsawa, A. Ko, H. Nakajima, M. Takahashi, T. Nishizuka, H. Ohtake, S. K. Banerjee, S.-H. Shin, D.H. Ko, C. Kang, D. Gilmer, R.J.W. Hill, W. Maszara, C. Hobbs and P. D. Kirsch, “Sub-100 nm InGaAs Quantum-Well (QW) Tri-Gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for Low-Power Logic Applications,“ International Electron Device Meeting (IEDM), 2013.
 

28. J. A. del Alamo, D. Antoniadis, A. Guo, D.-H. Kim, T.-W. Kim, J. Lin, W. Lu, A. Bardi, and X. Zhao, “InGaAs MOSFETs for CMOS: recent advances in process technology,” International Electron Device Meeting (IEDM), 2013 (Invited paper)
 

27. C.Y. Kang, R-H. Baek, T.-W. Kim, D. Koh, D.-H. Kim, T. Michalak, C. Borst, D. Veksler, G. Bersuker, R. Hill, C. Hobbs and P.D. Kirsch, “Comprehensive Layout and Process Optimization Study of Si and III-V Technology for sub-7nm Node,” International Electron Device Meeting (IEDM), 2013.
 

26. Tae-Woo Kim, Dae-Hyun Kim, R. J. W. Hill, R.T.P. Lee, M.H. Wong, T. Cunningham, J. A. del Alamo, S.K. Banerjee, S. Oktyabrsky, A. Greene, Y. Ohsawa, Y. Trickett, G. Nakamura, Q. Li, K.M. Lau, C. Hobbs, P. D. Kirsch and R. Jammy, “ETB-QW InAs MOSFET with scaled body for improved Electrostatics,“ International Electron Device Meeting (IEDM), 2012.
 

25. Tae-Woo Kim, R. J. W. Hill, D.-H. Kim, J. A. del Alamo, C. D. Young, D. Veksler, J. Oh, C. Y. Kang, C. Hobbs, P. D. Kirsch and R. Jammy, “InAs Quantum-Well MOSFET (Lg = 100 nm) for Logic and Microwave Applications,“ Asian Pacific Workshop on Advanced Device (AWAD), 2012. (Invited paper).
 

24. Tae-Woo Kim, R. J. W. Hill, C. D. Young, D. Veksler, L. Morassi, S. Oktybrshky, J. Oh, C. Y. Kang, D.-H. Kim, J. A. del Alamo, C. Hobbs, P. D. Kirsch and R. Jammy, “InAs Quantum-Well MOSFET (Lg = 100 nm) with Record High gm, fT and fmax,“ VLSI Symposium, 2012.
 

23. P.D. Kirsch, R.J.W. Hill, J. Huang, W.Y. Loh, Tae-Woo Kim, M. H. Wong, B. G. Min, C. Huffman, D. Veksler, C. D. Young, K. W. Ang, I. Ali, R. T. P. Lee, T. Ngai, A. Wang, W.-E. Wang, T. H. Cunningham, Y. T. Chen, P.Y. Hung, E. Bersch, B. Sassman, M. Cruz, S. Trammel, R. Droopad, S. Oktybrysky, J.C. Lee, G. Bersuker, C. Hobbs, R. Jammy, “Challenges of III-V Materials in Advanced CMOS Logic,” VLSITSA, 2012. (Invited paper)
 

22. R. J. W. Hill, W.Y. Loh, J. Huang, T.-W. Kim, R. Lee, W.E. Wang, J. Oh, C. Hobbs, P. Kirsch and R. Jammy, “Integration Challenges of III-V Materials in advanced CMOS Logic,” ECS Symposium, 2012. (Invited paper)
 

21. Jesús A. del Alamo, Dae-Hyun Kim, Tae-Woo Kim, Donghyun Jin, and Dimitri Antoniadis, “III-V CMOS: What have we learned from HEMTs?,” Indium Phosphide and Related Materials (IRPM), 2011. (Invited paper)
 

20. Tae-Woo Kim and Jesús A. del Alamo, “Injection velocity in thin channel InAs HEMTs,” Indium Phosphide and Related Materials (IRPM), pp. 2011.
 

19. Tae-Woo Kim, Dae-Hyun Kim, Jesús A. del Alamo, “60 nm Self-Aligned-Gate InGaAs HEMTs with Record High-Frequency Characteristics,” International Electron Device Meeting (IEDM), pp. 696-699, 2010.
 

18. Jinwook Chung, Tae-Woo Kim and Tomas Palacios, “Advanced Gate Technologies for State-of-the-art fT in AlGaN/GaN HEMT,” International Electron Device Meeting (IEDM), pp. 676-679, 2010.
 

17. Jesús A. del Alamo, Dae-Hyun Kim, Donghyun Jin, and Tae-Woo Kim, “10 nm CMOS: The Prospects for III-Vs,” Invited talk at Workshop on Post-Si CMOS Electronic Devices: the Role of Ge and III-V Materials of the European Materials Research Society Symposium, Strasbourg, France, June, 2010. (Invited paper).
 

16. Tae-Woo Kim, Dae-Hyun Kim, Jesús A. del Alamo, “Logic Characteristics of 40 nm thin-channel InAs HEMTs,” Indium Phosphide and Related Materials (IRPM), pp. 496-499, 2010.
 

15. Donghyun Jin, Dae-Hyun Kim, Tae-Woo Kim, Jesús A. del Alamo, “Quantum capacitance in scaled down III-V FETs,” International Electron Device Meeting (IEDM), pp. 495-498, 2009.
 

14. Tae-Woo Kim, Dae-Hyun Kim, Jesús A. del Alamo, “30 nm In0.7Ga0.3As Inverted- Type HEMTs with Reduced Gate Leakage Current for Logic Applications,” International Electron Device Meeting (IEDM), pp. 483-486, 2009.
 

13. Tae-Woo Kim, Dae-Hyun Kim, Sang Duk Park, Seung Heon Shin, Geun-Young Yeom, Jae Hyung Jang and Jong-In Song, “Enhancement-mode 130 nm InAs p- HEMTs having fT of 403 GHz and fmax of 470 GHz fabricated using atomic-layeretching technology,” Device Research Conference (DRC), pp. 211-212, 2008.
 

12. Tae-Woo Kim, Seung Heon Shin, Sang Duk Park, Geun-Young Yeom, Jae Hyung Jang and Jong-In Song, “Fabrication of In0.52Al0.48As/In0.53Ga0.47As p-HEMT by utilizing Ne-based atomic layer etching,” International Conference on Indium Phosphide and Related Materials, pp. 1-4, 2008.
 

11. Tae-Woo Kim, Jang-Soo Chun, Chul-Seung Park, Woo-Keun Song and Jong-In Song, “High-Performance Capless Self-aligned Gate D- and QE-mode p-HEMTs,” International Conference on Microwave and Millimeter Wave Technology, pp. 163- 165, 2008.
 

10. Tae-Woo Kim, Seong June Jo, Seung Heon Shin, Jae Hyung Jang and Jong-In Song, “High-Performance Capless Self-aligned Gate D- and QE-mode p-HEMTs,” Proceedings of Korean Conference on Semiconductors, pp. 77-78 2007.
 

9. Tae-Woo Kim, Seong June Jo, Seung Heon Shin, Jae Hyung Jang and Jong-In Song, “Sub-threshold Characteristics of 0.2 micro-m Capless InP/In0.52Al0.48As/In0.53Ga0.47As p- HEMTs Having a Self-aligned Gate,” Proceedings of International Conference on Indium Phosphide and Related Materials, pp. 309-312 2006.
 

8. Tae-Woo Kim, Seong June Jo, and Jong-In Song, “Characteristics of Capless InP/In0.52Al0.48As/In0.53Ga0.47As p-HEMTs Having a Self-aligned Gate,” Proceedings of Korean Conference on Semiconductors, pp. 423-424 2006.
 

7. Seong June Jo, Soo-Ghang Ihn, Tae-Woo Kim, Ki Ju Kim, Moon sup Hwang, Dong Hwan Lee, and Jong-In song, “Electrical and Structural Properties of Low- Temperature-Grown In0.53Ga0.47As on GaAs using an InGaAlAs Metamorphic Buffer,” Proceedings of European Microwave Conference (EUMC), pp. 425-428, 2005.
 

6. Soo-Ghang Ihn, Seong June Jo, Tae-Woo Kim, Kyung Hwan Oh, Jong-In song,”Effects of High-Temperature Rapid Thermal Annealing on Structural, Optical, and Electrical Properties of Metamorphic In0.52Al0.48As/In0.53Ga0.47As heterostructures Grown on GaAs Substrates,” Proceedings of Electronic Materials Conference, paper AA6, pp. 80, 2005.
 

5. Soo-Ghang Ihn, Seong June Jo, Kyung Hwan Oh, Tae-Woo Kim, Jong-In song,”Crystalline quality improvement of In0.52Al0.48As/In0.53Ga0.47As heterostructures on InAlAs/InGaAlAs/GaAs metamorphic buffer by post-growth rapid thermal annealing,” Proceedings of International Conference on Indium Phosphide and Related Materials, paper TP-16, 2005.
 

4. Dae-Hyun Kim, Tae-Woo Kim, Hun-Hee Noh, Jae-Hank Lee, Wei Feng, Xiaogang Xie, Quangang Du, Jiang, Jian, Jong-In Song, and Kwang-Seok Seo, “Suppression of Kink Phenomenon in Ultra-High-Speed Strained InAs-Inserted E-mode HEMTs with a New 0.1 micro-m Y-shaped Pt-Buried Gate and Their Impacts on Device Performance,” International Electron Device Meeting (IEDM), pp. 1027-1030, 2004.
 

3. Tae-Woo Kim, Dae-Hyun Kim, In-Ho Kang, Jeong-Hoon Kim, Kwang-Seok Seo, Jong-In Song, “Low-frequency Transconductance Dispersion Characteristics of 0.13 micro-m In0.65GaAs p-HEMT with side-recessed InAlAs and InP surface,” Proceedings of International Conference on Indium Phosphide and Related Materials, pp. 730-733 2004.
 

2. Tae-Woo Kim, Dae-Hyun Kim, In-Ho Kang, Jeong-Hoon Kim, Kwang-Seok Seo, Jong-In Song, “Low-frequency noise characteristics of 0.13 micro-m In0.65GaAs p-HEMT under the influence of impact ionization induced hole current,” Proceedings of Korean Conference on Semiconductors, pp. 181-182 2004.
 

1. Tae-Woo Kim, Dae-Hyun Kim, In-Ho Kang, Jeong-Hoon Kim, Kwang-Seok Seo, Jong-In Song, “Low-frequency noise characteristics of 0.13 micro-m In0.65GaAs p- HEMT under the influence of impact ionization induced hole current,” Proceedings of International Semiconductor Device Research Symposium, pp. 182-183 2003.