Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors

Surajit Chakraborty, and Tae-Woo kim

Micromachines, 2022 - mdpi.com

​

A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors

Walid Amir1,4, Ju‑Won Shin1,4, Ki‑Yong Shin1, Jae‑Moo Kim2, Chu‑Young Cho2, Kyung‑Ho Park2, Takuya Hoshi3, Takuya Tsutsumi3, Hiroki Sugiyama3, Hideaki Matsuzaki3 & Tae‑Woo Kim1*

Scientific reports, 2021 - nature.com

​

Investigation of Mean-Time-to-Failure Measurements from AlGaN/GaN High-Electron-Mobility Transistors Using Eyring Model

Surajit Chakraborty, and Tae-Woo kim

Electronics, 2021 - mdpi.com

​

Trap Characterization of Atomic-Layer-Deposited Al-Incorporated HfO2 Films on In0.53Ga0.47As

MM Rahman, TW Kim

ACS Applied Electronic Materials 3 (10), 4398-4408

​

Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al2O3 on an n-Type Silicon Substrate

A Bhattacharjee, TW Kim

Materials 14 (12), 3328

​

Comprehensive Analysis of Quantum Mechanical Effects of Interface Trap and Border Trap Densities of High-k Al2O3/In0.53Ga0.47As on a 300-mm Si Substrate

W Amir, DH Kim, TW Kim

IEEE Access 8, 211464-211473

​

Characterization of Electrical Traps Formed in Al2O3 under Various ALD Conditions

M Rahman, KY Shin, TW Kim

Materials 13 (24), 5809

​

Comparison of the interface and border traps of nanolaminate and bilayer structures of Al2O3 and HfO2 on In0. 53Ga0. 47As

MM Rahman, JG Kim, DH Kim, TW Kim

Japanese Journal of Applied Physics 58 (12), 120905

​

Border trap extraction with capacitance-equivalent thickness to reflect the quantum mechanical effect on atomic layer deposition high-k/In0. 53Ga0. 47As on 300-mm Si substrate

M Rahman, JG Kim, DH Kim, TW Kim

Scientific Reports 9 (1), 1-12

​

Characterization of Al incorporation into HfO2 dielectric by atomic layer deposition

M Rahman, JG Kim, DH Kim, TW Kim

Micromachines 10 (6), 361

​

Impact of in situ atomic layer deposition TiN/high-κ stack onto In0. 53Ga0. 47As MOSCAPs on 300 mm Si substrate

JG Kim, HM Kwon, DH Kim, TW Kim

Japanese Journal of Applied Physics 58 (4), 040905

​

Impact of Sulfur Passivation on Carrier Transport Properties of In0.7Ga0.3As Quantum-Well MOSFETs

JG Kim, HB Jo, IG Lee, TW Kim, DH Kim

IEEE Journal of the Electron Devices Society 9, 209-214

​

Border trap characterizations of al2o3/ZrO2 and Al2o3/HfO2 bilayer films based on ambient post metal annealing and constant voltage stress

M Rahman, DH Kim, TW Kim

Nanomaterials 10 (3), 527

​

​

​

​

​

​